Gate leakage is rising due to direct tunneling. Power and reliability concerns are expected to limit the ultimate scaling of SiO2-based insulators to about 1.5nm. The silicidation process is also coming under pressure.
Gate leakage is rising due to direct tunneling. Power and reliability concerns are expected to limit the ultimate scaling of SiO2-based insulators to about 1.5nm. The silicidation process is also coming under pressure.