Table Of Contents Part I. III-Nitride Materials and Devices: 1. Reduction in gate leakage current of AlGaN/GaN HEMT by rapid thermal oxidation T. Sreenidhi, A. Azizur Rahman, Arnab Bhattacharya, Amitava DasGupta and Nandita DasGupta; 2.
Table Of Contents Part I. III-Nitride Materials and Devices: 1. Reduction in gate leakage current of AlGaN/GaN HEMT by rapid thermal oxidation T. Sreenidhi, A. Azizur Rahman, Arnab Bhattacharya, Amitava DasGupta and Nandita DasGupta; 2.